Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2N6784
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Microsemi Corporation MOSFET N-CH 200V TO-205AF - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-205AF Metal Can TO-39 800mW (Ta), 15W (Tc) N-Channel - 200V 2.25A (Tc) 1.5 Ohm @ 1.5A, 0V 4V @ 250µA 8.6nC @ 10V - 10V ±20V
IXTP3N50D2
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IXYS MOSFET N-CH 500V 3A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel Depletion Mode 500V 3A (Tc) 1.5 Ohm @ 1.5A, 0V - 40nC @ 5V 1070pF @ 25V - ±20V