Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCPF9N60NTYDTU
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ON Semiconductor MOSFET N-CH 600V 9A TO220F SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 29.8W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V
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ON Semiconductor MOSFET N-CHANNEL 600V 9A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 83.3W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V
FCPF9N60NT
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1,164
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ON Semiconductor MOSFET N-CH 600V 9A TO220F SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 29.8W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V
FCP9N60N
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846
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ON Semiconductor MOSFET N-CH 600V 9A TO220 SuperMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 83.3W (Tc) N-Channel - 600V 9A (Tc) 385 mOhm @ 4.5A, 10V 4V @ 250µA 29nC @ 10V 1240pF @ 100V 10V ±30V