Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF3709LPBF
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3,152
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Infineon Technologies MOSFET N-CH 30V 90A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V
IRF3709
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3,496
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Infineon Technologies MOSFET N-CH 30V 90A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V
IRF3709L
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800
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Infineon Technologies MOSFET N-CH 30V 90A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V
IRFU3709
RFQ
VIEW
RFQ
1,400
In-stock
Infineon Technologies MOSFET N-CH 30V 90A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 4.5V 2672pF @ 16V 4.5V, 10V ±20V
IRF3709PBF
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3,932
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Infineon Technologies MOSFET N-CH 30V 90A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V