Packaging :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP22NS25Z
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STMicroelectronics MOSFET N-CH 250V 22A TO-220 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 135W (Tc) N-Channel 250V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 151nC @ 10V 2400pF @ 25V 10V ±20V
STI28N60M2
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK MDmesh™ M2 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 170W (Tc) N-Channel 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V