Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFP36N20X3M
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2,817
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IXYS 200V/36A ULTRA JUNCTION X3-CLASS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 36W (Tc) N-Channel 200V 36A (Tc) 45 mOhm @ 18A, 10V 4.5V @ 500µA 21nC @ 10V 1425pF @ 25V 10V ±20V
IXFP36N20X3
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RFQ
1,103
In-stock
IXYS 200V/36A ULTRA JUNCTION X3-CLASS HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 176W (Tc) N-Channel 200V 36A (Tc) 45 mOhm @ 18A, 10V 4.5V @ 500µA 21nC @ 10V 1425pF @ 25V 10V ±20V