Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
CDM2206-800LR SL
RFQ
VIEW
RFQ
2,708
In-stock
Central Semiconductor Corp MOSFET N-CH 800V 6A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 4V @ 250µA 24.3nC @ 10V - 10V 30V
STF8N80K5
RFQ
VIEW
RFQ
1,918
In-stock
STMicroelectronics MOSFET N-CH 800V 6A TO220FP SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V
STU8N80K5
RFQ
VIEW
RFQ
1,965
In-stock
STMicroelectronics MOSFET N CH 800V 6A IPAK SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 110W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V
TSM80N950CH C5G
RFQ
VIEW
RFQ
950
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 800V 6A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 110W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 4V @ 250µA 19.6nC @ 10V 691pF @ 100V 10V ±30V
STP8N80K5
RFQ
VIEW
RFQ
1,227
In-stock
STMicroelectronics MOSFET N CH 800V 6A TO220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V
STFI8N80K5
RFQ
VIEW
RFQ
1,934
In-stock
STMicroelectronics MOSFET N-CH 800V 6A I2PAKFP SuperMESH5™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak I2PAKFP (TO-281) 25W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V