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- Supplier Device Package :
- Power Dissipation (Max) :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,535
In-stock
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Infineon Technologies | MOSFET P-CH 100V 23A TO262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 110W (Tc) | P-Channel | 100V | 23A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
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VIEW |
905
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 28A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 250W (Tc) | N-Channel | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
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VIEW |
3,909
In-stock
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Vishay Siliconix | MOSFET N-CH 650V 28A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
