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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFBF30L	RFQ VIEW	PDF RFQ	647 In-stock	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	900V	3.6A (Tc)	3.7 Ohm @ 2.2A, 10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	10V	±20V
	IRFBF30	RFQ VIEW	PDF RFQ	2,770 In-stock	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	900V	3.6A (Tc)	3.7 Ohm @ 2.2A, 10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	10V	±20V
	IXFP3N80	RFQ VIEW	PDF RFQ	3,877 In-stock	IXYS	MOSFET N-CH 800V 3.6A TO-220		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	800V	3.6A (Tc)	3.6 Ohm @ 500mA, 10V	4.5V @ 1mA	24nC @ 10V	685pF @ 25V	10V	±20V
	IRFBC30ALPBF	RFQ VIEW	PDF RFQ	1,007 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	10V	±30V
	IXTP4N80P	RFQ VIEW	PDF RFQ	2,779 In-stock	IXYS	MOSFET N-CH 800V 3.5A TO-220		PolarHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	100W (Tc)	N-Channel	800V	3.6A (Tc)	3.4 Ohm @ 500mA, 10V	5.5V @ 100µA	14.2nC @ 10V	750pF @ 25V	10V	±30V
	IRFBC30PBF	RFQ VIEW	PDF RFQ	3,738 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4V @ 250µA	31nC @ 10V	660pF @ 25V	10V	±20V
	IRFBF30PBF	RFQ VIEW	PDF RFQ	745 In-stock	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	125W (Tc)	N-Channel	900V	3.6A (Tc)	3.7 Ohm @ 2.2A, 10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	10V	±20V
	IRFB812PBF	RFQ VIEW	PDF RFQ	3,405 In-stock	Infineon Technologies	MOSFET N CH 500V 3.6A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	78W (Tc)	N-Channel	500V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	5V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±20V
	IRFPF30PBF	RFQ VIEW	PDF RFQ	1,698 In-stock	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3	125W (Tc)	N-Channel	900V	3.6A (Tc)	3.7 Ohm @ 2.2A, 10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	10V	±20V
	IRFU9220PBF	RFQ VIEW	PDF RFQ	696 In-stock	Vishay Siliconix	MOSFET P-CH 200V 3.6A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	P-Channel	200V	3.6A (Tc)	1.5 Ohm @ 2.2A, 10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	10V	±20V
	IRFBC30APBF	RFQ VIEW	PDF RFQ	1,962 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	74W (Tc)	N-Channel	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	10V	±30V

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