Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH68P20T
RFQ
VIEW
RFQ
3,286
In-stock
IXYS MOSFET P-CH 200V 68A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 568W (Tc) P-Channel - 200V 68A (Tc) 55 mOhm @ 34A, 10V 4V @ 250µA 380nC @ 10V 33400pF @ 25V 10V ±15V
STW70N60M2-4
RFQ
VIEW
RFQ
2,080
In-stock
STMicroelectronics POWER MOSFET MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 600V 68A (Tc) 40 mOhm @ 34A, 10V 4V @ 250µA 118nC @ 10V 5200pF @ 100V 10V ±25V
STW70N60M2
RFQ
VIEW
RFQ
2,523
In-stock
STMicroelectronics MOSFET N-CH 600V 68A TO247 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 600V 68A (Tc) 40 mOhm @ 34A, 10V 4V @ 250µA 118nC @ 10V 5200pF @ 100V 10V ±25V