- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,083
In-stock
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Vishay Siliconix | MOSFET P-CH 50V 9.9A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 42W (Tc) | P-Channel | - | 50V | 9.9A (Tc) | 280 mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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VIEW |
686
In-stock
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Infineon Technologies | MOSFET N CH 500V 9.9A PGTO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 73W (Tc) | N-Channel | Super Junction | 500V | 9.9A (Tc) | 380 mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | 584pF @ 100V | 13V | ±20V | |||
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VIEW |
2,860
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 9.9A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | - | 200V | 9.9A (Tc) | 180 mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | 1800pF @ 25V | 4V, 5V | ±10V |