- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
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- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,057
In-stock
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ON Semiconductor | MOSFET P-CH 250V 4.7A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 55W (Tc) | P-Channel | 250V | 4.7A (Tc) | 1.1 Ohm @ 2.35A, 10V | 5V @ 250µA | 27nC @ 10V | 780pF @ 25V | 10V | ±30V | |||
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VIEW |
901
In-stock
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ON Semiconductor | MOSFET N-CH 500V 5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 83W (Tc) | N-Channel | 500V | 4.7A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 18.5nC @ 10V | 530pF @ 25V | 10V | ±30V | |||
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VIEW |
3,262
In-stock
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ON Semiconductor | MOSFET N-CH 100V 4.7A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 22W (Tc) | N-Channel | 100V | 4.7A (Tc) | 440 mOhm @ 2.35A, 5V | 2V @ 250µA | 8nC @ 5V | 235pF @ 25V | 5V | ±20V | |||
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VIEW |
3,517
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 4.7A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 42W (Tc) | N-Channel | 500V | 4.7A (Tc) | 800 mOhm @ 2.4A, 10V | 5V @ 250µA | 45nC @ 10V | 1000pF @ 25V | 10V | ±30V | |||
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VIEW |
3,462
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 4.7A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | 900V | 4.7A (Tc) | 2.5 Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,721
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 4.4A TO-220 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 160W (Tc) | N-Channel | 1200V | 4.7A (Tc) | 3.5 Ohm @ 2.3A, 10V | 5V @ 100µA | 55nC @ 10V | 120pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,257
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 4.7A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | 900V | 4.7A (Tc) | 2.5 Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
