Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQA10N80_F109
RFQ
VIEW
RFQ
2,238
In-stock
ON Semiconductor MOSFET N-CH 800V 9.8A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 240W (Tc) N-Channel 800V 9.8A (Tc) 1.05 Ohm @ 4.9A, 10V 5V @ 250µA 71nC @ 10V 2700pF @ 25V 10V ±30V
FQA10N80
RFQ
VIEW
RFQ
3,470
In-stock
ON Semiconductor MOSFET N-CH 800V 9.8A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 240W (Tc) N-Channel 800V 9.8A (Tc) 1.05 Ohm @ 4.9A, 10V 5V @ 250µA 71nC @ 10V 2700pF @ 25V 10V ±30V
IRLS640A
RFQ
VIEW
RFQ
2,456
In-stock
ON Semiconductor MOSFET N-CH 200V 9.8A TO-220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 40W (Tc) N-Channel 200V 9.8A (Tc) 180 mOhm @ 4.9A, 5V 2V @ 250µA 56nC @ 5V 1705pF @ 25V 5V ±20V
IRFI640G
RFQ
VIEW
RFQ
3,601
In-stock
Vishay Siliconix MOSFET N-CH 200V 9.8A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 200V 9.8A (Tc) 180 mOhm @ 5.9A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V
IRFI640GPBF
RFQ
VIEW
RFQ
2,384
In-stock
Vishay Siliconix MOSFET N-CH 200V 9.8A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 200V 9.8A (Tc) 180 mOhm @ 5.9A, 10V 4V @ 250µA 70nC @ 10V 1300pF @ 25V 10V ±20V