- Manufacture :
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- Package / Case :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,204
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
2,222
In-stock
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ON Semiconductor | MOSFET N-CH 600V 0.8A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 26W (Tc) | N-Channel | 600V | 800mA (Ta) | 15 Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9nC @ 10V | 92pF @ 25V | 10V | ±30V | |||
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VIEW |
601
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
