Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,875
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ON Semiconductor MOSFET N-CH 600V 7.8A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 100W (Tc) N-Channel 600V 7.8A (Tc) 700 mOhm @ 3.9A, 10V 5V @ 250µA 54nC @ 10V 1900pF @ 25V 10V ±30V
IRFPE50
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RFQ
3,970
In-stock
Vishay Siliconix MOSFET N-CH 800V 7.8A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel 800V 7.8A (Tc) 1.2 Ohm @ 4.7A, 10V 4V @ 250µA 200nC @ 10V 3100pF @ 25V 10V ±20V
FQU10N20CTU
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RFQ
1,486
In-stock
ON Semiconductor MOSFET N-CH 200V 7.8A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 50W (Tc) N-Channel 200V 7.8A (Tc) 360 mOhm @ 3.9A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V
IRFPE50PBF
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RFQ
1,998
In-stock
Vishay Siliconix MOSFET N-CH 800V 7.8A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 190W (Tc) N-Channel 800V 7.8A (Tc) 1.2 Ohm @ 4.7A, 10V 4V @ 250µA 200nC @ 10V 3100pF @ 25V 10V ±20V