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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TSM4NB60CZ C0G	RFQ VIEW	PDF RFQ	3,099 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO220		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V
	AOWF4N60	RFQ VIEW	PDF RFQ	1,426 In-stock	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 4A TO262F		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Full Pack, I²Pak	-	25W (Tc)	N-Channel	600V	4A (Tc)	2.3 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	640pF @ 25V	10V	±30V
	TSM4NB60CH X0G	RFQ VIEW	PDF RFQ	3,652 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A TO251		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Stub Leads, IPak	TO-251 (IPAK)	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V
	TSM4NB60CI C0G	RFQ VIEW	PDF RFQ	1,148 In-stock	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 4A ITO220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220	50W (Tc)	N-Channel	600V	4A (Tc)	2.5 Ohm @ 2A, 10V	4.5V @ 250µA	14.5nC @ 10V	500pF @ 25V	10V	±30V

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