- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
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14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,207
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
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VIEW |
3,394
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32.8W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
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VIEW |
660
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
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VIEW |
2,193
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 32W (Tc) | N-Channel | 650V | 4A (Tc) | 550 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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VIEW |
1,209
In-stock
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IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 80W (Tc) | N-Channel | 650V | 4A (Tc) | 850 mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | 10V | ±30V | |||
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VIEW |
1,729
In-stock
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Diodes Incorporated | MOSFET N-CH 650V 4A ITO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | 8.35W (Ta) | N-Channel | 650V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
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VIEW |
1,235
In-stock
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Diodes Incorporated | MOSFET N CH 650V 4A TO220-3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 2.19W (Ta) | N-Channel | 650V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
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VIEW |
2,592
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 650V 4A IPAK | MDmesh™ M6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | 650V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 3.75V @ 250µA | 5.1nC @ 10V | 170pF @ 100V | 10V | ±25V | |||
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VIEW |
914
In-stock
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STMicroelectronics | MOSFET N-CH 650V 4A TO-220AB | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
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VIEW |
1,350
In-stock
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STMicroelectronics | MOSFET N-CH 650V 4A TO-220FP | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
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VIEW |
3,970
In-stock
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STMicroelectronics | MOSFET N-CH 650V 4A IPAK | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 60W (Tc) | N-Channel | 650V | 4A (Tc) | 1.35 Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | 226pF @ 100V | 10V | ±25V | |||
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VIEW |
3,300
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 650V 4A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 70W (Tc) | N-Channel | 650V | 4A (Tc) | 3.37 Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | 549pF @ 25V | 10V | ±30V | |||
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VIEW |
782
In-stock
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Diodes Incorporated | MOSFET N-CH 650V 4A ITO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | 8.35W (Ta) | N-Channel | 650V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
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VIEW |
605
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 650V 4A TO251 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 70W (Tc) | N-Channel | 650V | 4A (Tc) | 3.37 Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | 549pF @ 25V | 10V | ±30V |