Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH1N200P3HV
RFQ
VIEW
RFQ
3,209
In-stock
IXYS MOSFET N-CH 2000V 1A TO-247HV - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247HV 125W (Tc) N-Channel 2000V 1A (Tc) 40 Ohm @ 500mA, 10V 4V @ 250µA 23.5nC @ 10V 646pF @ 25V 10V ±20V
IXTX6N200P3HV
RFQ
VIEW
RFQ
3,705
In-stock
IXYS 2000V TO 3000V POLAR3 POWER MOSF - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247PLUS-HV 960W (Tc) N-Channel 2000V 6A (Tc) 4 Ohm @ 3A, 10V 5V @ 250µA 143nC @ 10V 3700pF @ 25V 10V ±20V