Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,946
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IXYS MOSFET N-CH 1000V 22A I4-PAC HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ - N-Channel - 1000V 22A (Tc) 390 mOhm @ 15A, 10V 5V @ 8mA 250nC @ 10V - 10V ±20V
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825
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IXYS MOSFET N-CH 1000V 30A ISOPLUS264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 550W (Tc) N-Channel - 1000V 30A (Tc) 280 mOhm @ 30A, 10V 5V @ 8mA 380nC @ 10V 9200pF @ 25V 10V ±20V
IXFK30N100Q2
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1,797
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IXYS MOSFET N-CH 1000V 30A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 735W (Tc) N-Channel - 1000V 30A (Tc) 400 mOhm @ 15A, 10V 5V @ 8mA 186nC @ 10V 8200pF @ 25V 10V ±30V
IXFX30N100Q2
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3,235
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IXYS MOSFET N-CH 1000V 30A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 735W (Tc) N-Channel - 1000V 30A (Tc) 400 mOhm @ 15A, 10V 5V @ 8mA 186nC @ 10V 8200pF @ 25V 10V ±30V