Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXFR180N07
RFQ
VIEW
RFQ
2,533
In-stock
IXYS MOSFET N-CH 70V 180A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 417W (Tc) N-Channel - 70V 180A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 420nC @ 10V 9400pF @ 25V 10V ±20V
IXFK180N07
RFQ
VIEW
RFQ
1,531
In-stock
IXYS MOSFET N-CH 70V 180A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 568W (Tc) N-Channel - 70V 180A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 420nC @ 10V 9400pF @ 25V 10V ±20V
IXFX180N07
RFQ
VIEW
RFQ
2,709
In-stock
IXYS MOSFET N-CH 70V 180A PLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 568W (Tc) N-Channel - 70V 180A (Tc) 6 mOhm @ 500mA, 10V 4V @ 8mA 420nC @ 10V 9400pF @ 25V 10V ±20V
IXFK110N07
RFQ
VIEW
RFQ
2,014
In-stock
IXYS MOSFET N-CH 70V 110A TO-264AA HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 70V 110A (Tc) 6 mOhm @ 55A, 10V 4V @ 8mA 480nC @ 10V 9000pF @ 25V 10V ±20V