Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHX20N06T,127
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RFQ
1,427
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NXP USA Inc. MOSFET N-CH 55V 12.9A SOT186A TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 23W (Tc) N-Channel - 55V 12.9A (Tc) 75 mOhm @ 10A, 10V 4V @ 1mA 9.8nC @ 10V 320pF @ 25V 10V ±20V
IRFI614GPBF
RFQ
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RFQ
3,454
In-stock
Vishay Siliconix MOSFET N-CH 250V 2.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 23W (Tc) N-Channel - 250V 2.1A (Tc) 2 Ohm @ 1.3A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 10V ±20V
IRFI614G
RFQ
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RFQ
1,442
In-stock
Vishay Siliconix MOSFET N-CH 250V 2.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 23W (Tc) N-Channel - 250V 2.1A (Tc) 2 Ohm @ 1.3A, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 10V ±20V
FQPF2N60C
RFQ
VIEW
RFQ
1,532
In-stock
ON Semiconductor MOSFET N-CH 600V 2A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 23W (Tc) N-Channel - 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V