Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP2M002A060PG
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RFQ
2,655
In-stock
Global Power Technologies Group MOSFET N-CH 600V 2A - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 52.1W (Tc) N-Channel 600V 2A (Tc) 4 Ohm @ 1A, 10V 5V @ 250µA 9nC @ 10V 360pF @ 25V 10V ±30V
GP2M002A060HG
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RFQ
1,424
In-stock
Global Power Technologies Group MOSFET N-CH 600V 2A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 52.1W (Tc) N-Channel 600V 2A (Tc) 4 Ohm @ 1A, 10V 5V @ 250µA 9nC @ 10V 360pF @ 25V 10V ±30V
GP1M003A050HG
RFQ
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RFQ
2,996
In-stock
Global Power Technologies Group MOSFET N-CH 500V 2.5A TO220 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 52.1W (Tc) N-Channel 500V 2.5A (Tc) 2.8 Ohm @ 1.25A, 10V 4V @ 250µA 9nC @ 10V 395pF @ 25V 10V ±30V
TSM2N60ECH C5G
RFQ
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RFQ
3,588
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 2A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 52.1W (Tc) N-Channel 600V 2A (Tc) 4 Ohm @ 1A, 10V 5V @ 250µA 9.5nC @ 10V 362pF @ 25V 10V ±30V