Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M015A050FH
RFQ
VIEW
RFQ
2,323
In-stock
Global Power Technologies Group MOSFET N-CH 500V 14A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 53W (Tc) N-Channel - 500V 14A (Tc) 440 mOhm @ 7A, 10V 4V @ 250µA 39nC @ 10V 2263pF @ 25V 10V ±30V
GP1M012A060FH
RFQ
VIEW
RFQ
2,041
In-stock
Global Power Technologies Group MOSFET N-CH 600V 12A TO220F - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 53W (Tc) N-Channel - 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 2308pF @ 25V 10V ±30V
R6011KNX
RFQ
VIEW
RFQ
2,766
In-stock
Rohm Semiconductor MOSFET N-CH 600V 11A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 53W (Tc) N-Channel Schottky Diode (Isolated) 600V 11A (Tc) 390 mOhm @ 3.8A, 10V 5V @ 1mA 22nC @ 10V 740pF @ 25V 10V ±20V
IPU50R950CEAKMA1
RFQ
VIEW
RFQ
2,695
In-stock
Infineon Technologies MOSFET N-CH 500V 4.3A TO251 CoolMOS™ CE Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 53W (Tc) N-Channel - 500V 4.3A (Tc) 950 mOhm @ 1.2A, 13V 3.5V @ 100µA 10.5nC @ 10V 231pF @ 100V 13V ±20V
IPP60R280P7XKSA1
RFQ
VIEW
RFQ
1,800
In-stock
Infineon Technologies MOSFET N-CH 600V 12A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 53W (Tc) N-Channel - 600V 12A (Tc) 280 mOhm @ 3.8A, 10V 4V @ 190µA 18nC @ 10V 761pF @ 400V 10V ±20V