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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,302
In-stock
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Infineon Technologies | MOSFET N-CH 560V 16A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 160W (Tc) | N-Channel | - | 560V | 16A (Tc) | 280 mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
2,567
In-stock
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Infineon Technologies | MOSFET N-CH 600V 16A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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VIEW |
3,452
In-stock
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STMicroelectronics | MOSFET N-CH 600V 16A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | - | 600V | 16A (Tc) | 220 mOhm @ 8A, 10V | 4V @ 250µA | 44nC @ 10V | 1330pF @ 50V | 10V | ±30V | |||
