- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,778
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 38A T-MAX | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 694W (Tc) | N-Channel | 800V | 38A (Tc) | 200 mOhm @ 19A, 10V | 5V @ 2.5mA | 195nC @ 10V | 5200pF @ 25V | 10V | ±30V | |||
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3,969
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 47A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 47A (Tc) | 210 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
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2,527
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 31A T-MAX | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 565W (Tc) | N-Channel | 800V | 31A (Tc) | 240 mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160nC @ 10V | 4670pF @ 25V | 10V | ±30V | |||
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VIEW |
3,254
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 48A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | 800V | 49A (Tc) | 190 mOhm @ 24A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9330pF @ 25V | 10V | ±30V | |||
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2,094
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 41A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | 800V | 41A (Tc) | 240 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 10V | ±30V | |||
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VIEW |
639
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 43A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | 800V | 43A (Tc) | 210 mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8070pF @ 25V | 10V | ±30V | |||
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VIEW |
2,894
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 34A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 417W (Tc) | N-Channel | 800V | 34A (Tc) | 145 mOhm @ 22A, 10V | 3.9V @ 2mA | 355nC @ 10V | 4510pF @ 25V | 10V | ±20V |