Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT8020B2LLG
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2,778
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Microsemi Corporation MOSFET N-CH 800V 38A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 694W (Tc) N-Channel 800V 38A (Tc) 200 mOhm @ 19A, 10V 5V @ 2.5mA 195nC @ 10V 5200pF @ 25V 10V ±30V
APT44F80B2
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3,969
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Microsemi Corporation MOSFET N-CH 800V 47A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel 800V 47A (Tc) 210 mOhm @ 24A, 10V 5V @ 2.5mA 305nC @ 10V 9330pF @ 25V 10V ±30V
APT8024B2LLG
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RFQ
2,527
In-stock
Microsemi Corporation MOSFET N-CH 800V 31A T-MAX POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 565W (Tc) N-Channel 800V 31A (Tc) 240 mOhm @ 15.5A, 10V 5V @ 2.5mA 160nC @ 10V 4670pF @ 25V 10V ±30V
APT48M80B2
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RFQ
3,254
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Microsemi Corporation MOSFET N-CH 800V 48A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel 800V 49A (Tc) 190 mOhm @ 24A, 10V 5V @ 2.5mA 305nC @ 10V 9330pF @ 25V 10V ±30V
APT38F80B2
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RFQ
2,094
In-stock
Microsemi Corporation MOSFET N-CH 800V 41A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel 800V 41A (Tc) 240 mOhm @ 20A, 10V 5V @ 2.5mA 260nC @ 10V 8070pF @ 25V 10V ±30V
APT41M80B2
RFQ
VIEW
RFQ
639
In-stock
Microsemi Corporation MOSFET N-CH 800V 43A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel 800V 43A (Tc) 210 mOhm @ 20A, 10V 5V @ 2.5mA 260nC @ 10V 8070pF @ 25V 10V ±30V
APT34N80B2C3G
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RFQ
2,894
In-stock
Microsemi Corporation MOSFET N-CH 800V 34A T-MAX - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 417W (Tc) N-Channel 800V 34A (Tc) 145 mOhm @ 22A, 10V 3.9V @ 2mA 355nC @ 10V 4510pF @ 25V 10V ±20V