- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,217
In-stock
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Global Power Technologies Group | MOSFET N-CH 250V 16A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 93.9W (Tc) | N-Channel | - | 250V | 16A (Tc) | 240 mOhm @ 8A, 10V | 5V @ 250µA | 19nC @ 10V | 944pF @ 25V | 10V | ±30V | |||
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VIEW |
885
In-stock
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Global Power Technologies Group | MOSFET N-CH 800V 3A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 94W (Tc) | N-Channel | - | 800V | 3A (Tc) | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | 10V | ±30V | |||
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VIEW |
2,165
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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VIEW |
2,915
In-stock
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STMicroelectronics | MOSFET N-CH 600V 7A IPAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 7A (Tc) | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 19nC @ 10V | 560pF @ 50V | 10V | ±25V | |||
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VIEW |
1,076
In-stock
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STMicroelectronics | MOSFET N-CH 600V 10A IPAK | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 10A (Tc) | 550 mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 50V | 10V | ±25V | |||
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VIEW |
2,664
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 90W (Tc) | N-Channel | - | 950V | 4A (Tc) | 3.5 Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | 10V | ±30V | |||
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VIEW |
3,994
In-stock
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ON Semiconductor | MOSFET N-CH 600V 2.8A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 49W (Tc) | N-Channel | - | 600V | 2.8A (Tc) | 2.5 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V | |||
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VIEW |
2,067
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.5A IPAK | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 800V | 2.5A (Tc) | 4.5 Ohm @ 1.25A, 10V | 4.5V @ 50µA | 19nC @ 10V | 485pF @ 25V | 10V | ±30V | |||
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VIEW |
3,699
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
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VIEW |
891
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | |||
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VIEW |
767
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 2.4A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 500V | 2.4A (Tc) | 3 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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VIEW |
3,732
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 3A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 94W (Tc) | N-Channel | - | 800V | 3A (Tc) | 4.2 Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | 10V | ±30V | |||
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VIEW |
2,242
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 2.4A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 500V | 2.4A (Tc) | 3 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
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VIEW |
744
In-stock
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Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |