Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M008A025PG
RFQ
VIEW
RFQ
3,646
In-stock
Global Power Technologies Group MOSFET N-CH 250V 8A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 52W (Tc) N-Channel 250V 8A (Tc) 600 mOhm @ 4A, 10V 5V @ 250µA 8.4nC @ 10V 423pF @ 25V 10V ±30V
GP1M008A050PG
RFQ
VIEW
RFQ
2,509
In-stock
Global Power Technologies Group MOSFET N-CH 500V 8A IPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 120W (Tc) N-Channel 500V 8A (Tc) 850 mOhm @ 4A, 10V 5V @ 250µA 21nC @ 10V 937pF @ 25V 10V ±30V
TSM70N600CH C5G
RFQ
VIEW
RFQ
2,085
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 700V 8A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 83W (Tc) N-Channel 700V 8A (Tc) 600 mOhm @ 4A, 10V 4V @ 250µA 12.6nC @ 10V 743pF @ 100V 10V ±30V
TSM60N600CH C5G
RFQ
VIEW
RFQ
611
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 8A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 83W (Tc) N-Channel 600V 8A (Tc) 600 mOhm @ 4A, 10V 4V @ 250µA 13nC @ 10V 743pF @ 100V 10V ±30V
IPU80R600P7AKMA1
RFQ
VIEW
RFQ
3,930
In-stock
Infineon Technologies MOSFET N-CH 800V 8A TO251-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 60W (Tc) N-Channel 800V 8A (Tc) 600 mOhm @ 3.4A, 10V 3.5V @ 170µA 20nC @ 10V 570pF @ 500V 10V ±20V