- Part Status :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,868
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 100A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 2.5W (Ta), 120W (Tc) | N-Channel | - | 20V | 100A (Tc) | 6.5 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,165
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
811
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,805
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 100A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 2.5W (Ta), 120W (Tc) | N-Channel | - | 20V | 100A (Tc) | 6.5 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,400
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 90A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 120W (Tc) | N-Channel | - | 30V | 90A (Tc) | 9 mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 4.5V | 2672pF @ 16V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,244
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,974
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | P-Channel | - | 55V | 18A (Tc) | 110 mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,947
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | - | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
VIEW |
744
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,850
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V |