- Manufacture :
- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,252
In-stock
|
Global Power Technologies Group | MOSFET N-CH 900V 10A TO3PN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 312W (Tc) | N-Channel | - | 900V | 10A (Tc) | 1.05 Ohm @ 5A, 10V | 4V @ 250µA | 53nC @ 10V | 2336pF @ 25V | 10V | ±30V | |||
|
VIEW |
684
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 10A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 10A (Tc) | 1.1 Ohm @ 5A, 10V | 5V @ 250µA | 58nC @ 10V | 2800pF @ 25V | 10V | ±30V | |||
|
VIEW |
823
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 10A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 192W (Tc) | N-Channel | - | 600V | 10A (Tc) | 730 mOhm @ 5A, 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,132
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 10A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 240W (Tc) | N-Channel | - | 800V | 10A (Tc) | 1.1 Ohm @ 5A, 10V | 5V @ 250µA | 58nC @ 10V | 2800pF @ 25V | 10V | ±30V | |||
|
VIEW |
845
In-stock
|
IXYS | MOSFET N-CH 800V 10A TO-3P | HiPerFET™, PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 300W (Tc) | N-Channel | - | 800V | 10A (Tc) | 1.1 Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40nC @ 10V | 2050pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,872
In-stock
|
IXYS | MOSFET P-CH 500V 10A TO-3P | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 300W (Tc) | P-Channel | - | 500V | 10A (Tc) | 1 Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | 2840pF @ 25V | 10V | ±20V |