Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPA11N80C3XKSA2
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RFQ
1,058
In-stock
Infineon Technologies MOSFET N-CH 800V 11A TO220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab PG-TO220-3 34W (Tc) N-Channel 800V 11A (Tc) 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 85nC @ 10V 1600pF @ 100V 10V ±20V
IXFP5N100PM
RFQ
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RFQ
2,027
In-stock
IXYS MOSFET N-CH 1000V 2.3A TO-220 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Isolated Tab 42W (Tc) N-Channel 1000V 2.3A (Tc) 2.8 Ohm @ 2.5A, 10V 6V @ 250µA 33.4nC @ 10V 1830pF @ 25V 10V ±30V
IXTP14N60PM
RFQ
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RFQ
1,135
In-stock
IXYS MOSFET N-CH 600V 7A TO-220 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Isolated Tab 75W (Tc) N-Channel 600V 7A (Tc) 550 mOhm @ 7A, 10V 5.5V @ 250µA 36nC @ 10V 2500pF @ 25V 10V ±30V
IXTP8N70X2M
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RFQ
3,730
In-stock
IXYS MOSFET N-CHANNEL 700V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Overmolded 32W (Tc) N-Channel 700V 4A (Tc) 550 mOhm @ 500mA, 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V 10V ±30V