- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,505
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,863
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,112
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 11.6A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 125W (Tc) | N-Channel | - | 560V | 11.6A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,792
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 280 mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,378
In-stock
|
Infineon Technologies | MOSFET N-CH 800V 8A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 104W (Tc) | N-Channel | - | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
2,460
In-stock
|
Infineon Technologies | MOSFET N-CH 560V 7.6A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 83W (Tc) | N-Channel | - | 560V | 7.6A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,961
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 38A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | 2780pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
2,292
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 20.7A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
