- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,848
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5.5A TO-220 | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 40W (Tc) | N-Channel | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
2,387
In-stock
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Infineon Technologies | MOSFET N-CH 200V 7A TO-220AB | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 40W (Tc) | N-Channel | 200V | 7A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
942
In-stock
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Infineon Technologies | MOSFET N-CH 800V 3.6A TO-220AB | SIPMOS® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | 800V | 3.6A (Tc) | 3 Ohm @ 2A, 10V | 4V @ 1mA | - | 1350pF @ 25V | 10V | ±20V |