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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT8075BN	RFQ VIEW	PDF RFQ	3,597 In-stock	Microsemi Corporation	MOSFET N-CH 800V 13A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	800V	13A (Tc)	750 mOhm @ 6.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT6040BNG	RFQ VIEW	PDF RFQ	2,802 In-stock	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	600V	18A (Tc)	400 mOhm @ 9A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT6040BN	RFQ VIEW	PDF RFQ	3,035 In-stock	Microsemi Corporation	MOSFET N-CH 600V 18A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	600V	18A (Tc)	400 mOhm @ 9A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT6030BN	RFQ VIEW	PDF RFQ	2,054 In-stock	Microsemi Corporation	MOSFET N-CH 600V 23A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	360W (Tc)	N-Channel	-	600V	23A (Tc)	300 mOhm @ 11.5A, 10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	10V	±30V
	APT5025BN	RFQ VIEW	PDF RFQ	2,743 In-stock	Microsemi Corporation	MOSFET N-CH 500V 23A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	500V	23A (Tc)	250 mOhm @ 11.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT5022BNG	RFQ VIEW	PDF RFQ	2,216 In-stock	Microsemi Corporation	MOSFET N-CH 500V 27A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	360W (Tc)	N-Channel	-	500V	27A (Tc)	220 mOhm @ 13.5A, 10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	10V	±30V
	APT5020BNFR	RFQ VIEW	PDF RFQ	3,800 In-stock	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	360W (Tc)	N-Channel	-	500V	28A (Tc)	200 mOhm @ 14A, 10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	10V	±30V
	APT5020BN	RFQ VIEW	PDF RFQ	1,050 In-stock	Microsemi Corporation	MOSFET N-CH 500V 28A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	360W (Tc)	N-Channel	-	500V	28A (Tc)	200 mOhm @ 14A, 10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	10V	±30V
	APT4065BNG	RFQ VIEW	PDF RFQ	1,668 In-stock	Microsemi Corporation	MOSFET N-CH 400V 11A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	180W (Tc)	N-Channel	-	400V	11A (Tc)	650 mOhm @ 5.5A, 10V	4V @ 1mA	55nC @ 10V	950pF @ 25V	10V	±30V
	APT1002RBNG	RFQ VIEW	PDF RFQ	3,595 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 8A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	240W (Tc)	N-Channel	-	1000V	8A (Tc)	1.6 Ohm @ 4A, 10V	4V @ 1mA	105nC @ 10V	1800pF @ 25V	10V	±30V
	APT1001RBN	RFQ VIEW	PDF RFQ	1,288 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 11A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	1000V	11A (Tc)	1 Ohm @ 5.5A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V
	APT1001R1BN	RFQ VIEW	PDF RFQ	1,403 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 10.5A TO247AD		POWER MOS IV®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD	310W (Tc)	N-Channel	-	1000V	10.5A (Tc)	1.1 Ohm @ 5.25A, 10V	4V @ 1mA	130nC @ 10V	2950pF @ 25V	10V	±30V

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