- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,535
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 31.6A TO247 | C2M™ | Active | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 192W (Tc) | N-Channel | 1200V | 36A (Tc) | 98 mOhm @ 20A, 20V | 4V @ 5mA | 62nC @ 5V | 950pF @ 1000V | 20V | +25V, -10V | |||
|
VIEW |
3,762
In-stock
|
Cree/Wolfspeed | ZFET SIC DMOSFET, 1700V VDS, RDS | C2M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 277W (Tc) | N-Channel | 1700V | 40A (Tc) | 125 mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | 2250pF @ 1000V | 20V | +25V, -10V | |||
