Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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C2M0025120D
RFQ
VIEW
RFQ
603
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 463W (Tc) N-Channel - 1200V 90A (Tc) 34 mOhm @ 50A, 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V 20V +25V, -10V
C2M0040120D
RFQ
VIEW
RFQ
3,736
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 330W (Tc) N-Channel - 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
C2M0160120D
RFQ
VIEW
RFQ
2,838
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 19A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 125W (Tc) N-Channel - 1200V 19A (Tc) 196 mOhm @ 10A, 20V 2.5V @ 500µA 32.6nC @ 20V 527pF @ 800V 20V +25V, -10V
C2M0280120D
RFQ
VIEW
RFQ
2,566
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 10A TO-247-3 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 62.5W (Tc) N-Channel - 1200V 10A (Tc) 370 mOhm @ 6A, 20V 2.8V @ 1.25mA (Typ) 20.4nC @ 20V 259pF @ 1000V 20V +25V, -10V
C2M1000170D
RFQ
VIEW
RFQ
2,972
In-stock
Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 69W (Tc) N-Channel - 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V