Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTH120P065T
RFQ
VIEW
RFQ
703
In-stock
IXYS MOSFET P-CH 65V 120A TO-247 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 298W (Tc) P-Channel - 65V 120A (Tc) 10 mOhm @ 500mA, 10V 4V @ 250µA 185nC @ 10V 13200pF @ 25V 10V ±15V
IXTP120P065T
RFQ
VIEW
RFQ
2,881
In-stock
IXYS MOSFET P-CH 65V 120A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 298W (Tc) P-Channel - 65V 120A (Tc) 10 mOhm @ 500mA, 10V 4V @ 250µA 185nC @ 10V 13200pF @ 25V 10V ±15V
IXTP28P065T
RFQ
VIEW
RFQ
1,671
In-stock
IXYS MOSFET P-CH 65V 28A TO-220 TrenchP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 83W (Tc) P-Channel - 65V 28A (Tc) 45 mOhm @ 14A, 10V 4.5V @ 250µA 46nC @ 10V 2030pF @ 25V 10V ±15V