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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRC830PBF	RFQ VIEW	PDF RFQ	3,321 In-stock	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220-5		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	74W (Tc)	N-Channel	Current Sensing	500V	4.5A (Tc)	1.5 Ohm @ 2.7A, 10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	10V	±20V
	IRF450	RFQ VIEW	PDF RFQ	750 In-stock	Infineon Technologies	MOSFET N-CH 500V 12A TO-3-3		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)	150W (Tc)	N-Channel	-	500V	12A (Tc)	500 mOhm @ 12A, 10V	4V @ 250µA	120nC @ 10V	2700pF @ 25V	10V	±20V
	IRC840PBF	RFQ VIEW	PDF RFQ	3,008 In-stock	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220-5		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5	125W (Tc)	N-Channel	Current Sensing	500V	8A (Tc)	850 mOhm @ 4.8A, 10V	4V @ 250µA	67nC @ 10V	1300pF @ 25V	10V	±20V
	IRFB812PBF	RFQ VIEW	PDF RFQ	3,405 In-stock	Infineon Technologies	MOSFET N CH 500V 3.6A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	78W (Tc)	N-Channel	-	500V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	5V @ 250µA	20nC @ 10V	810pF @ 25V	10V	±20V

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