- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,230
In-stock
|
Global Power Technologies Group | MOSFET N-CH 900V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 123W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
|
VIEW |
730
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 900V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | 900V | 4A (Tc) | 4 Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,030
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 4A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 38.7W (Tc) | N-Channel | 800V | 4A (Tc) | 3 Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | 955pF @ 25V | 10V | ±30V |