Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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GP2M010A065H
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1,529
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Global Power Technologies Group MOSFET N-CH 650V 9.5A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 198W (Tc) N-Channel - 650V 9.5A (Tc) 820 mOhm @ 4.75A, 10V 5V @ 250µA 36nC @ 10V 1670pF @ 25V 10V ±30V
GP1M013A050H
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RFQ
2,995
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Global Power Technologies Group MOSFET N-CH 500V 13A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 183W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 36nC @ 10V 1918pF @ 25V 10V ±30V
GP1M010A060H
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RFQ
3,231
In-stock
Global Power Technologies Group MOSFET N-CH 600V 10A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 198W (Tc) N-Channel - 600V 10A (Tc) 750 mOhm @ 5A, 10V 4V @ 250µA 36nC @ 10V 1891pF @ 25V 10V ±30V
IXFP16N60P3
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RFQ
2,508
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IXYS MOSFET N-CH 600V 16A TO-220 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 347W (Tc) N-Channel - 600V 16A (Tc) 470 mOhm @ 500mA, 10V 5V @ 1.5mA 36nC @ 10V 1830pF @ 25V 10V ±30V