Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXFP14N85XM
RFQ
VIEW
RFQ
812
In-stock
IXYS MOSFET N-CHANNEL 850V 14A TO220 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 38W (Tc) N-Channel - 850V 14A (Tc) 550 mOhm @ 7A, 10V 5.5V @ 1mA 30nC @ 10V 1043pF @ 25V 10V ±30V
IXFP4N85XM
RFQ
VIEW
RFQ
2,855
In-stock
IXYS MOSFET N-CH 850V 3.5A TO220 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 35W (Tc) N-Channel - 850V 3.5A (Tc) 2.5 Ohm @ 2A, 10V 5.5V @ 250µA 7nC @ 10V 247pF @ 25V 10V ±30V