Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL3103D2PBF
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RFQ
3,142
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Infineon Technologies MOSFET N-CH 30V 54A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 70W (Tc) N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V 1V @ 250µA 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V
IRL3103D1
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RFQ
3,261
In-stock
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
DMT6009LCT
RFQ
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RFQ
721
In-stock
Diodes Incorporated MOSFET N-CHA 60V 37.2A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2.2W (Ta), 25W (Tc) N-Channel - 60V 37.2A (Tc) 12 mOhm @ 13.5A, 10V 2V @ 250µA 33.5nC @ 10V 1925pF @ 30V 4.5V, 10V ±16V
IRL3103D1PBF
RFQ
VIEW
RFQ
2,548
In-stock
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V