Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2544(F)
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1,016
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 6A TO-220AB - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 600V 6A (Ta) 1.25 Ohm @ 3A, 10V 4V @ 1mA 30nC @ 10V 1300pF @ 10V 10V ±30V
NVMSD6N303R2G
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1,805
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ON Semiconductor MOSFET N-CH 30V 6A 8SOIC - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC - N-Channel Schottky Diode (Isolated) 30V 6A (Ta) 32 mOhm @ 6A, 10V 2.5V @ 250µA 30nC @ 10V 950pF @ 24V - -