Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AO4266
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RFQ
1,158
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 60V 10A - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.1W (Ta) N-Channel 60V 10A (Ta) 15 mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V 1340pF @ 30V 4.5V, 10V ±20V
RDN100N20
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RFQ
2,126
In-stock
Rohm Semiconductor MOSFET N-CH 200V 10A TO-220FN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 35W (Tc) N-Channel 200V 10A (Ta) 360 mOhm @ 5A, 10V 4V @ 1mA 30nC @ 10V 543pF @ 10V 10V ±30V
RJK6012DPP-E0#T2
RFQ
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RFQ
1,452
In-stock
Renesas Electronics America MOSFET N-CH 600V 10A TO220 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel 600V 10A (Ta) 920 mOhm @ 5A, 10V - 30nC @ 10V 1100pF @ 25V 10V ±30V
RJK6012DPE-00#J3
RFQ
VIEW
RFQ
3,903
In-stock
Renesas Electronics America MOSFET N-CH 600V 10A LDPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-83 4-LDPAK 100W (Tc) N-Channel 600V 10A (Ta) 920 mOhm @ 5A, 10V - 30nC @ 10V 1100pF @ 25V 10V ±30V
RDN100N20FU6
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RFQ
1,283
In-stock
Rohm Semiconductor MOSFET N-CH 200V 10A TO-220FN - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FN 35W (Tc) N-Channel 200V 10A (Ta) 360 mOhm @ 5A, 10V 4V @ 1mA 30nC @ 10V 543pF @ 10V 10V ±30V