Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1002DPN-E0#T2
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1,560
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Renesas Electronics America MOSFET N-CH 100V 70A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel 100V 70A (Ta) 7.6 mOhm @ 35A, 10V - 94nC @ 10V 6450pF @ 10V 10V ±20V
NDPL070N10BG
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2,584
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ON Semiconductor MOSFET N-CH 100V 70A TO220-3 - Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 TO-220-3 2.1W (Ta), 72W (Tc) N-Channel 100V 70A (Ta) 10.8 mOhm @ 35A, 15V 4V @ 1mA 26nC @ 10V 2010pF @ 50V 10V, 15V ±20V
RJK0703DPN-E0#T2
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1,420
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Renesas Electronics America MOSFET N-CH 75V 70A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 75V 70A (Ta) 6.7 mOhm @ 35A, 10V - 56nC @ 10V 4150pF @ 10V 10V ±20V
TK70D06J1(Q)
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3,959
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 70A TO220W - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220(W) 45W (Tc) N-Channel 60V 70A (Ta) 6.4 mOhm @ 35A, 10V 2.3V @ 1mA 87nC @ 10V 5450pF @ 10V 4.5V, 10V ±20V