Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,942
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Vishay Siliconix MOSFET N-CH 600V 18A TO263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 179W (Tc) N-Channel 600V 18A (Tc) 202 mOhm @ 9A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
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2,051
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Vishay Siliconix MOSFET N-CH 600V 18A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel 600V 18A (Tc) 202 mOhm @ 9A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
IXTH76N25T
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3,666
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IXYS MOSFET N-CH 250V 76A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 460W (Tc) N-Channel 250V 76A (Tc) 39 mOhm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 4500pF @ 25V 10V ±30V
IXTQ76N25T
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2,587
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IXYS MOSFET N-CH 250V 76A TO-3P - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 460W (Tc) N-Channel 250V 76A (Tc) 39 mOhm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 4500pF @ 25V 10V ±30V
IXTA76N25T
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2,162
In-stock
IXYS MOSFET N-CH 250V 76A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 460W (Tc) N-Channel 250V 76A (Tc) 39 mOhm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 4500pF @ 25V 10V ±30V
IXTP76N25T
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705
In-stock
IXYS MOSFET N-CH 250V 76A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 460W (Tc) N-Channel 250V 76A (Tc) 39 mOhm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 4500pF @ 25V 10V ±30V
SIHB20N50E-GE3
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1,628
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Vishay Siliconix MOSFET N-CH 500V 19A TO-263 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 179W (Tc) N-Channel 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
IRFIB7N50LPBF
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2,691
In-stock
Vishay Siliconix MOSFET N-CH 500V 6.8A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 46W (Tc) N-Channel 500V 6.8A (Tc) 380 mOhm @ 4.1A, 10V 5V @ 250µA 92nC @ 10V 2220pF @ 25V 10V ±30V
SIHG20N50E-GE3
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838
In-stock
Vishay Siliconix MOSFET N-CH 500V 19A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 179W (Tc) N-Channel 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
SIHP20N50E-GE3
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1,446
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Vishay Siliconix MOSFET N-CH 500V 19A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 179W (Tc) N-Channel 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V
TSM100N06CZ C0G
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3,279
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 60V 100A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 167W (Tc) N-Channel 60V 100A (Tc) 6.7 mOhm @ 30A, 10V 4V @ 250µA 92nC @ 10V 4382pF @ 30V 10V ±20V
SIHA20N50E-E3
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2,617
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Vishay Siliconix MOSFET N-CH 500V 19A TO-220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 34W (Tc) N-Channel 500V 19A (Tc) 184 mOhm @ 10A, 10V 4V @ 250µA 92nC @ 10V 1640pF @ 100V 10V ±30V