Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PMZ600UNELYL
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Nexperia USA Inc. 20 V, N-CHANNEL TRENCH MOSFET - Active Cut Tape (CT) - -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 2.7W (Tc) N-Channel Standard 20V 600mA (Tc) 620 mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7nC @ 4.5V 21.3pF @ 10V - -
PMZ600UNEYL
RFQ
VIEW
RFQ
920
In-stock
Nexperia USA Inc. MOSFET N-CH 20V 0.6A XQFN3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-101, SOT-883 DFN1006-3 360mW (Ta), 2.7W (Tc) N-Channel - 20V 600mA (Ta) 620 mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7nC @ 4.5V 21.3pF @ 10V 1.2V, 4.5V ±8V