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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFE23N100	RFQ VIEW	PDF RFQ	3,453 In-stock	IXYS	MOSFET N-CH 1000V 21A ISOPLUS227		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B	500W (Tc)	N-Channel	-	1000V	21A (Tc)	430 mOhm @ 11.5A, 10V	5V @ 8mA	250nC @ 10V	7000pF @ 25V	10V	±20V
	IXFN21N100Q	RFQ VIEW	PDF RFQ	1,480 In-stock	IXYS	MOSFET N-CH 1000V 21A SOT-227B		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B	520W (Tc)	N-Channel	-	1000V	21A (Tc)	500 mOhm @ 500mA, 10V	5V @ 4mA	170nC @ 10V	5900pF @ 25V	10V	±20V
	IXFK21N100Q	RFQ VIEW	PDF RFQ	2,651 In-stock	IXYS	MOSFET N-CH 1000V 21A TO-264		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	500W (Tc)	N-Channel	-	1000V	21A (Tc)	500 mOhm @ 10.5A, 10V	5.5V @ 4mA	170nC @ 10V	6900pF @ 25V	10V	±20V
	IXFX21N100Q	RFQ VIEW	PDF RFQ	3,219 In-stock	IXYS	MOSFET N-CH 1000V 21A PLUS 247		HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	500W (Tc)	N-Channel	-	1000V	21A (Tc)	500 mOhm @ 10.5A, 10V	5.5V @ 4mA	170nC @ 10V	6900pF @ 25V	10V	±20V

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