- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,737
In-stock
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ON Semiconductor | MOSFET N-CH 600V DPAK | QFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | 810pF @ 25V | 10V | ±30V | |||
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2,371
In-stock
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ON Semiconductor | MOSFET N-CH 600V 2.8A | QFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 49W (Tc) | N-Channel | - | 600V | 2.8A (Tc) | 2.5 Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V |