- Supplier Device Package :
- Power Dissipation (Max) :
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- Rds On (Max) @ Id, Vgs :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,077
In-stock
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ON Semiconductor | MOSFET N-CH 800V 2.4A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.13W (Ta), 85W (Tc) | N-Channel | - | 800V | 2.4A (Tc) | 6.3 Ohm @ 900mA, 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | 10V | ±30V | |||
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VIEW |
1,375
In-stock
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ON Semiconductor | MOSFET P-CH 400V 2.4A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 39W (Tc) | P-Channel | - | 400V | 2.4A (Tc) | 3.1 Ohm @ 1.2A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 10V | ±30V | |||
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VIEW |
3,092
In-stock
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ON Semiconductor | MOSFET N-CH 600V 2.4A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 600V | 2.4A (Tc) | 3.6 Ohm @ 1.2A, 10V | 5V @ 250µA | 13nC @ 10V | 450pF @ 25V | 10V | ±30V | |||
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VIEW |
2,858
In-stock
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ON Semiconductor | MOSFET P-CH 200V 2.4A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 37W (Tc) | P-Channel | - | 200V | 2.4A (Tc) | 2.7 Ohm @ 1.2A, 10V | 5V @ 250µA | 8nC @ 10V | 250pF @ 25V | 10V | ±30V |