- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,744
In-stock
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ON Semiconductor | MOSFET P-CH 400V 3.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | P-Channel | - | 400V | 3.5A (Tc) | 3.1 Ohm @ 1.75A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 10V | ±30V | |||
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VIEW |
1,159
In-stock
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ON Semiconductor | MOSFET N-CH 500V 3.5A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 500V | 3.5A (Tc) | 1.8 Ohm @ 1.75A, 10V | 5V @ 250µA | 17nC @ 10V | 610pF @ 25V | 10V | ±30V | |||
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VIEW |
696
In-stock
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ON Semiconductor | MOSFET N-CH 700V 3.5A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 48W (Tc) | N-Channel | - | 700V | 3.5A (Tc) | 1.5 Ohm @ 1.75A, 10V | 5V @ 250µA | 40nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
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VIEW |
1,257
In-stock
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ON Semiconductor | MOSFET N-CH 200V 3.5A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 200V | 3.5A (Tc) | 1.2 Ohm @ 1.75A, 10V | 5V @ 250µA | 7.5nC @ 10V | 270pF @ 25V | 10V | ±30V |