Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQP9N08L
RFQ
VIEW
RFQ
1,629
In-stock
ON Semiconductor MOSFET N-CH 80V 9.3A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 40W (Tc) N-Channel - 80V 9.3A (Tc) 210 mOhm @ 4.65A, 10V 5V @ 250µA 6.1nC @ 5V 280pF @ 25V 5V, 10V ±20V
FQP2N40
RFQ
VIEW
RFQ
1,262
In-stock
ON Semiconductor MOSFET N-CH 400V 1.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 40W (Tc) N-Channel - 400V 1.8A (Tc) 5.8 Ohm @ 900mA, 10V 5V @ 250µA 5.5nC @ 10V 150pF @ 25V 10V ±30V
FQP1N50
RFQ
VIEW
RFQ
740
In-stock
ON Semiconductor MOSFET N-CH 500V 1.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 40W (Tc) N-Channel - 500V 1.4A (Tc) 9 Ohm @ 700mA, 10V 5V @ 250µA 5.5nC @ 10V 150pF @ 25V 10V ±30V
FQP2N30
RFQ
VIEW
RFQ
3,338
In-stock
ON Semiconductor MOSFET N-CH 300V 2.1A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 40W (Tc) N-Channel - 300V 2.1A (Tc) 3.7 Ohm @ 1.05A, 10V 5V @ 250µA 5nC @ 10V 130pF @ 25V 10V ±30V